Impedance adaptation in a THz detector
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United States of America Patent
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Apr 4, 2017
Grant Date -
Dec 17, 2015
app pub date -
Jun 10, 2015
filing date -
Jun 13, 2014
priority date (Note) -
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Abstract
At least one electronic device, system and method of manufacturing an electromagnetic wave detector are provided herein. The electronic device for receiving at least one electromagnetic wave of a given frequency may comprise at least one first field effect transistor, and at least one antenna configured to receive the at least one electromagnetic wave and connected to a gate of the at least one first field effect transistor, wherein a length of the gate is in a same order of magnitude as an oscillation length of an oscillation regime of the at least one first field effect transistor at the given frequency, and a width of the gate is such that an impedance presented by the at least one first field effect transistor in the oscillation regime is adapted to an impedance of the at least one antenna.
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