System and method for controlling wafer and thin film surface temperature
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United States of America Patent
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Apr 11, 2017
Grant Date -
May 26, 2016
app pub date -
Aug 31, 2015
filing date -
Nov 21, 2014
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Abstract
A vapor deposition system and its wafer and thin-film temperature control method are disclosed. A susceptor carries a plurality of wafer holders with each bearing a wafer. The susceptor makes revolution around a center axle and each wafer holder rotates around its own axis. A carrier gas approaches a first surface of the wafer and is heated to form a thin film to be deposited on the first surface. An isothermal plate is placed at a second surface of the wafer and the second surface is opposite to the first surface. One or more remote temperature-measuring elements measure a temperature of a rear surface of the isothermal plate and the rear surface is opposite to the wafer, and a wafer-side temperature is calculated by the measured rear surface temperature of the isothermal plate.
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