Surface machining method for single crystal SiC substrate, manufacturing method thereof, and grinding plate for surface machining single crystal SiC substrate

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United States of America Patent

PATENT NO 9620374
SERIAL NO

14765875

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Abstract

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A surface machining method for a single crystal SiC substrate, including: a step of mounting a grinding plate which includes a soft pad and a hard pad sequentially attached onto a base metal having a flat surface, a step of generating an oxidation product by using the grinding plate, and a step of grinding the surface while removing the oxidation product, wherein abrasive grains made of at least one metallic oxide that is softer than single crystal SiC and has a bandgap are fixed to the surface of the hard pad.

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Patent Owner(s)

  • SHOWA DENKO K.K.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kato, Tomohisa Tsukuba, JP 46 176
Kido, Takanori Hikone, JP 17 189

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