Fin field effect transistor structure and method to form defect free merged source and drain epitaxy for low external resistance
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United States of America Patent
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Apr 11, 2017
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app pub date -
Nov 18, 2015
filing date -
Nov 18, 2015
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Abstract
A method of forming a semiconductor device that includes providing a plurality of fin structures, wherein a surface of the fin structures has a first orientation for a diamond shaped epitaxial growth deposition surface. A first epitaxial semiconductor material having a diamond geometry is grown on the diamond shaped epitaxial growth surface. A blocking material is formed protecting a lower portion of the first epitaxial semiconductor material. An upper portion of the first epitaxial semiconductor material is removed to expose a second orientation surface of the first epitaxial semiconductor material for merged epitaxial semiconductor growth. A second epitaxial semiconductor material is epitaxially formed on the first epitaxial semiconductor material. The second epitaxial semiconductor material has a substantially planar upper surface and extends into direct contact with at least two adjacent fin structures.
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