Power semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9620444
SERIAL NO

14402538

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

According to a power semiconductor device of the present invention, it comprises a plurality of lead frames formed into like a wiring pattern, a power semiconductor element joined onto the lead frame, and a capacitor placed between mutually adjacent two lead frames, and is encapsulated with a mold resin. The capacitor is characterized in that external electrodes of that capacitor are connected to the lead frames each through a stress-relaxation structure portion that is lower in rigidity than the capacitor.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
MITSUBISHI ELECTRIC CORPORATIONTOKYO 100-8310

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fujita, Masahiko Tokyo, JP 139 1062
Fukase, Tatsuya Tokyo, JP 10 36
Kato, Masaki Tokyo, JP 405 3629
Nakajima, Dai Tokyo, JP 41 499

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
11.5 Year Payment $7400.00 $3700.00 $1850.00 Oct 11, 2028
Fee Large entity fee small entity fee micro entity fee
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00