Replacement metal gate dielectric cap

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United States of America Patent

PATENT NO 9620622
SERIAL NO

15189579

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Abstract

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A method for manufacturing a field effect transistor includes chelating a molecular mask to a replacement metal gate in a field effect transistor. The method may further include forming a patterned dielectric layer on a bulk dielectric material and a gate dielectric barrier in one or more deposition steps. The method may include removing the molecular mask and exposing part of the gate dielectric barrier before depositing a dielectric cap that touches the gate dielectric barrier and the replacement metal gate.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Farmer, Damon B White Plains, US 71 697
Guillorn, Michael A Cold Springs, US 268 5028
Pranatharthiharan, Balasubramanian Watervliet, US 224 1251
Tulevski, George S Croton-on-Hudson, US 94 769

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