Defect reduction in seeded aluminum nitride crystal growth

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United States of America Patent

PATENT NO 9624601
APP PUB NO 20150020731A1
SERIAL NO

14458861

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Abstract

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Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

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Patent Owner(s)

Patent OwnerAddress
CRYSTAL IS INC70 COHOES AVENUE GREEN ISLAND NY 12183

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bondokov, Robert T Watervliet, US 43 826
Morgan, Kenneth E Castleton, US 23 730
Schowalter, Leo J Latham, US 87 1665
Stack, Glen A Scotia, US 1 11

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