Atomic layer deposition of metal carbide films using aluminum hydrocarbon compounds

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United States of America Patent

PATENT NO 9631272
APP PUB NO 20140127405A1
SERIAL NO

14069681

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Methods of forming metal carbide films are provided. In some embodiments, a substrate is exposed to alternating pulses of a transition metal species and an aluminum hydrocarbon compound, such as TMA, DMAH, or TEA. The aluminum hydrocarbon compound is selected to achieve the desired properties of the metal carbide film, such as aluminum concentration, resistivity, adhesion and oxidation resistance. In some embodiments, the methods are used to form a metal carbide layer that determines the work function of a control gate in a flash memory.

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Patent Owner(s)

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ASM IP HOLDING B VVERSTERKERSTRAAT 8 ALMERE 1322 AP

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Haukka, Suvi P Helsinki, FI 104 17903
Li, Dong Phoenix, US 584 9113
Li, Wei-Min Espoo, FI 27 4400
Marcus, Steven Tempe, US 34 2403

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