High operating speed resistive random access memory
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United States of America Patent
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Apr 25, 2017
Grant Date -
Jan 8, 2015
app pub date -
May 24, 2013
filing date -
Jun 23, 2011
priority date (Note) -
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Abstract
Providing for resistive random access memory (RRAM) having high read speeds is described herein. By way of example, a RRAM memory can be powered at one terminal by a bitline, and connected at another terminal to a gate of a transistor having a low gate capacitance (relative to a capacitance of the bitline). With this arrangement, a signal applied at the bitline can quickly switch the transistor gate, in response to the RRAM memory being in a conductive state. A sensing circuit configured to measure the transistor can detect a change in current, voltage, etc., of the transistor and determine a state of the RRAM memory from the measurement. Moreover, this measurement can occur very quickly due to the low capacitance of the transistor gate, greatly improving the read speed of RRAM.
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