Segmentation of blocks for faster bit line settling/recovery in non-volatile memory devices
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United States of America Patent
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Apr 25, 2017
Grant Date -
Jan 14, 2016
app pub date -
Jul 10, 2014
filing date -
Jul 10, 2014
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Abstract
In non-volatile memory circuits, the amount of time needed for bit lines to settle can vary significantly depending on the location of the blocks selected. For example, in a sensing operation, the amount of time for bit lines to settle when being pre-charged by sense amplifiers will be shorter for blocks near the sense amps than for far side blocks. These variations can be particularly acute in high density memory structures, such as in 3D NAND memory, such as that of the BiCS variety. Rather than use the same timing for all blocks, the blocks can be segmented into groups based on their proximity to the sense amps. When performing a sensing operation, the timing can be adjusted based on the block group to which a selected page of memory cells belongs.
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