Device manufacturing method of processing cut portions of semiconductor substrate using carbon dioxide particles

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United States of America Patent

PATENT NO 9633903
SERIAL NO

14927211

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Abstract

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A device manufacturing method according to an embodiment includes forming a film on the side of a second surface of a substrate having a first surface and the second surface, cutting the substrate, cutting the film, and injecting particles onto at least one of a first cut portion formed by the cutting of the substrate and a second cut portion formed by the cutting of the film, to process the at least one of the first cut portion or the second cut portion.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Takano, Masamune Kanazawa Ishikawa, JP 8 25

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