RF attenuator device and system

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United States of America Patent

PATENT NO 9634635
SERIAL NO

14836079

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ATTORNEY / AGENT: (SPONSORED)

Importance

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Abstract

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A device includes a thermally conductive and electrically insulative substrate having a first major surface and a second major surface. A coupling structure is configured to reduce the RF input signal by substantially a predetermined amount of attenuation power. A tuning circuit is characterized by a tuning reactance substantially matched to a predetermined system impedance. A resistor is disposed on a majority of the first major surface and is characterized by a parasitic capacitance that is substantially negated by the tuning reactance. The resistor includes a first resistive portion and a second resistive portion; each of the first resistive portion and the second resistive portion being configured to direct approximately one-half of the attenuation power to the ground portion.

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Patent Owner(s)

Patent OwnerAddress
TTM TECHNOLOGIES INC200 EAST SANDPOINTE SUITE 400 SANTA ANA CA 92707

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jensen, Bo Minoa, US 4 15
Mei, Chong Jamesville, US 20 104

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