Dual-layer light-sensitive developer-soluble bottom anti-reflective coatings for 193-nm lithography
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United States of America Patent
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May 2, 2017
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app pub date -
Feb 19, 2009
filing date -
Feb 22, 2008
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Abstract
The present invention provides methods of fabricating microelectronics structures and the resulting structures formed thereby using a dual-layer, light-sensitive, wet-developable bottom anti-reflective coating stack to reduce reflectance from the substrate during exposure. The invention provides dye-filled and dye-attached compositions for use in the anti-reflective coatings. The anti-reflective coatings are thermally crosslinkable and photochemically decrosslinkable. The bottom anti-reflective coating stack has gradient optical properties and develops at the same time as the photoresist. The method and structure are particularly suited to high-NA lithography processes.
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