Pattern formation method

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United States of America Patent

PATENT NO 9640410
APP PUB NO 20160276167A1
SERIAL NO

14808109

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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According to one embodiment, a pattern formation method includes forming a resist pattern on an underlying film, slimming the resist pattern, forming a pinning portion having affinity for a first polymer by depositing, on a surface of the slimmed resist pattern, an etching product produced by etching the underlying film, forming a neutral, film having affinity for the first polymer and a second polymer on the underlying film after the etching, forming a block copolymer film containing the first polymer and the second polymer on the pinning portion and the neutral film, forming a microphase separation pattern by applying a predetermined process to the block copolymer film to perform microphase separation.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Seino, Yuriko Tokyo, JP 21 145

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