Apparati for fabricating thin semiconductor bodies from molten material
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United States of America Patent
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May 9, 2017
Grant Date -
Aug 7, 2014
app pub date -
Apr 11, 2014
filing date -
Mar 9, 2009
priority date (Note) -
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status (Latency Note)
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Abstract
A pressure differential can be applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential can allow release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted through the thickness of the forming wafer. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet can allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.
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