Apparatus for sputtering and a method of fabricating a metallization structure

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United States of America Patent

PATENT NO 9644261
SERIAL NO

14181886

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A method of depositing a metallization structure (1) comprises depositing a TaN layer (4) by applying a power supply between an anode and a target in a plurality of pulses to reactively sputter Ta from the target onto the substrate (2) to form a TaN seed layer (4). A Ta layer (5) is deposited onto the TaN seed layer (4) by applying the power supply in a plurality of pulses and applying a high-frequency signal to a pedestal supporting the substrate (2) to generate a self-bias field adjacent to the substrate (2).

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Patent Owner(s)

Patent OwnerAddress
EVATEC AGHAUPTSTRASSE 1A TRÜBBACH 9477

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bammesberger, Stefan Stuttgart, DE 4 14
Elghazzali, Mohamed Feldkirch, AT 10 70
Minkoley, Dennis Chur, CH 3 17
Weichart, Juergen Balzers, LI 16 108

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