Tailored silicon layers for transistor multi-gate control

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United States of America Patent

PATENT NO 9646886
SERIAL NO

14984471

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Abstract

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Disclosed is a process of making field-effect transistor gate stacks containing different deposited thin film silicon material layers having different hydrogen content, and devices comprising these gate stacks. The threshold voltage (Vt) can be tuned by tailoring the hydrogen content of the thin film silicon material layer positioned below a core dielectric and directly on a semiconductor material substrate.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Narayanan, Vijay New York, US 308 5536
Rozen, John Hastings on Hudson, US 56 265

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