Silicon nanowire formation in replacement metal gate process

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United States of America Patent

PATENT NO 9647062
SERIAL NO

14805669

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Abstract

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Techniques for a semiconductor device are provided. Techniques are directed to forming a semiconductor device by: forming a fin structure in a substrate, forming a protective layer over an upper portion of the fin structure, the protective layer having an etch selectivity with respect to a material of the fin structure, and performing an undercut etch so as to remove a lower portion of the fin structure below the protective layer, thereby defining a nanowire structure from the fin structure.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chia-Yu Guilderland, US 113 685
Liu, Zuoguang Schednectady, US 156 1106
Yamashita, Tenko Schenectady, US 599 4944

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