Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having an epitaxially grown base
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United States of America Patent
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May 9, 2017
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app pub date -
Apr 13, 2015
filing date -
Apr 13, 2015
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Abstract
A method of forming a semiconductor structure includes providing an emitter and a collector on a surface of an insulator layer. The emitter and the collector are spaced apart and have a doping of a first conductivity type. An intrinsic base is formed between the emitter and the collector and on the insulator layer by epitaxially growing the intrinsic base from at least a vertical surface of the emitter and a vertical surface of the collector. The intrinsic base has a doping of a second conductivity type opposite to the first conductivity type, and a first heterojunction exists between the emitter and the intrinsic base and a second heterojunction exists between the collector and the intrinsic base.
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