Methods of forming highly p-type doped germanium tin films and structures and devices including the films

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United States of America Patent

PATENT NO 9647114
SERIAL NO

14827177

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Abstract

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Methods of forming p-type doped germanium-tin layers, systems for forming the p-type doped germanium-tin layers, and structures including the p-type doped germanium-tin layers are disclosed. The p-type doped germanium-tin layers include an n-type dopant, which allows relatively high levels of tin and/or p-type dopant to be included into the p-type doped germanium-tin layers.

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Patent Owner(s)

  • ASM IP HOLDING B.V.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Margetis, Joe Gilbert, US 23 5462
Tolle, John Gilbert, US 62 13632

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