Atomic layer deposition sealing integration for nanosheet complementary metal oxide semiconductor with replacement spacer
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 9, 2017
Grant Date -
Mar 9, 2017
app pub date -
Sep 4, 2015
filing date -
Sep 4, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor device including a gate structure present on at least two suspended channel structures, and a composite spacer present on sidewalls of the gate structure. The composite spacer may include a cladding spacer present along a cap portion of the gate structure, and an inner spacer along the channel portion of the gate structure between adjacent channel semiconductor layers of the suspended channel structures. The inner spacer may include a crescent shape with a substantially central seam.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully