SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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May 16, 2017
Grant Date -
Jun 1, 2017
app pub date -
Jun 17, 2016
filing date -
Dec 1, 2015
priority date (Note) -
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Abstract
According to one embodiment, a method of manufacturing a semiconductor device includes: forming a first film including a conductive material above a semiconductor substrate; forming a second film on the first film; forming a third film including a conductive material on the second film; exposing a part of the second film; and wet etching the second film. In the wet etching, a first and second insulation films are deposited on side surfaces of the first and third films, and part of a space between the first and third films is blocked by the first and second insulation films to form an air gap between the first and third films.
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