Semiconductor device
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United States of America Patent
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May 16, 2017
Grant Date -
Dec 25, 2014
app pub date -
Mar 3, 2014
filing date -
Jun 20, 2013
priority date (Note) -
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Abstract
A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region having a second conductivity type, a first insulating layer on the first and second semiconductor regions, and field plate electrodes are provided in the first insulating layer at different distances from the first semiconductor layer. A first field plate electrode is at a first distance, a second field plate electrode is at a second distance greater than the first distance, and a third field plate electrode is at a distance greater than the second distance. The first through third field plate electrodes are electrically connected to each other and the third electrode is electrically connected to the second semiconductor region.
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