Method for manufacturing piezoelectric device
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United States of America Patent
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May 16, 2017
Grant Date -
Aug 21, 2014
app pub date -
Apr 23, 2014
filing date -
Feb 9, 2010
priority date (Note) -
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Abstract
A method for manufacturing a piezoelectric device including a piezoelectric thin film, a support member, a first electrode, and a cavity formed at a support member side of the first electrode between the piezoelectric thin film and the support member includes forming a sacrificial layer in an area to define the cavity, forming an etching adjustment layer which adjusts progress of etching in a region where the first electrode is exposed to a side of the piezoelectric thin film, simultaneously forming a through hole through which a portion of the sacrificial layer is exposed to the side of the piezoelectric thin film and an opening which the first electrode is exposed to the side of the piezoelectric thin film by etching the piezoelectric thin film and the etching adjustment layer, and removing the sacrificial layer through the through hole.
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