Semiconductor memory device

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United States of America Patent

PATENT NO 9653681
SERIAL NO

14838535

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Abstract

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According to one embodiment, a semiconductor memory device includes a plurality of first resistance-change memory elements of a two-terminal type, a second resistance-change memory element of a two-terminal type, a rectifier element of a two-terminal type, a local bit line connected to ends of the first resistance-change memory elements, an end of the second resistance-change memory element and an end of the rectifier element, and a global bit line connected to the other end of the second resistance-change memory element.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Takashima, Daisaburo Yokohama, JP 245 3262

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