Passivation stack on a crystalline silicon solar cell

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United States of America Patent

PATENT NO 9660130
APP PUB NO 20160276519A1
SERIAL NO

15037163

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Abstract

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A method for manufacturing a passivation stack on a crystalline silicon solar cell device. The method includes providing a substrate comprising a crystalline silicone layer such as a crystalline silicon wafer or chip, cleaning a surface of the crystalline silicon layer by removing an oxide layer at least from a portion of one side of the crystalline silicon layer, depositing, on at least a part of the cleaned surface, a layer of silicon oxynitride, and depositing a capping layer comprising a hydrogenated dielectric material on top of the layer of silicon oxynitride, wherein the layer of silicon oxynitride is deposited at a temperature from 100° C. to 200° C., and the step of depositing the layer of silicon oxynitride includes using N2O and SiH4 as precursor gasses in an N2 ambient atmosphere and depositing silicon oxynitride with a gas flow ratio of N2O to SiH4 below 2.

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Patent Owner(s)

Patent OwnerAddress
INSTITUTT FOR ENERGITEKNIKK2027 KJELLER

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Foss, Sean Erik Skedsmokorset, NO 5 16
Haug, Halvard Oslo, NO 3 3
Stensrud, Marstein Erik Skedsmokorset, NO 3 3
Wang, Wenjing Beijing West Disctrict, CN 58 281
Zhou, Chunlan Beijing, CN 2 3
Zhou, Su Beijing, CN 16 18
Zhu, Junjie Oslo, NO 19 296

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