Phase change memory structure to reduce leakage from the heating element to the surrounding material
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United States of America Patent
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May 23, 2017
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app pub date -
Aug 28, 2014
filing date -
Aug 28, 2014
priority date (Note) -
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Abstract
A phase change memory (PCM) cell with a heating element electrically isolated from laterally surrounding regions of the PCM cell by a cavity is provided. A dielectric region is arranged between first and second conductors. A heating plug is arranged within a hole extending through the dielectric region to the first conductor. The heating plug includes a heating element running along sidewalls of the hole, and includes a sidewall structure including a cavity arranged between the heating element and the sidewalls. A phase change element is in thermal communication with the heating plug and arranged between the heating plug and the second conductor. Also provide is a method for manufacturing the PCM cell.
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