Plasma processing apparatus
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United States of America Patent
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May 30, 2017
Grant Date -
Apr 9, 2015
app pub date -
Oct 8, 2014
filing date -
Oct 9, 2013
priority date (Note) -
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Abstract
In a plasma processing apparatus, when pulse-modulating the high frequency power RF1 for plasma generation and the high frequency power RF2 for ion attraction with a first pulse PS1 and a second pulse PS2 having different frequencies, respectively, an impedance sensor 96A in a matching device 40 of a plasma generation system calculates an average value (primary moving average value ma) of an load impedance on a high frequency transmission line 43 for each cycle of the second pulse PS2 having a lower frequency, and outputs a load impedance measurement value based on those average values of the load impedance. Then, a matching controller 94A controls reactances of reactance elements XH1 and XH2 within a matching circuit 88A such that the load impedance measurement value is equal or approximate to a matching point (50Ω).
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