Method for establishing mapping relation in STI etch and controlling critical dimension of STI

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United States of America Patent

PATENT NO 9666472
APP PUB NO 20170025304A1
SERIAL NO

15083292

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The present invention provides a method for controlling a critical dimension of shallow trench isolations in a STI etch process, comprises the following steps: before the STI etch process, pre-establishing a mapping relation between a post-etch and pre-etch critical dimension difference of a BARC layer and a thickness of the BARC layer; and during the STI etch process after coating the BARC layer, measuring the thickness of the BARC layer and determining a trimming time for a hard mask layer according to a critical dimension difference corresponding to the measured thickness in the mapping relation and a critical dimension of a photoresist pattern, then performing a trimming process for the hard mask layer lasting the trimming time to make a critical dimension of the hard mask layer equal to a required critical dimension of an active area, and etching a substrate to form shallow trenches with a predetermined critical dimension.

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Patent Owner(s)

Patent OwnerAddress
SHANGHAI HUALI MICROELECTRONICS CORPORATIONNO 6 LIANGTENG ROAD PUDONG NEW AREA SHANGHAI 201314

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Feng, Qiyan Shanghai, CN 3 44
Lv, Yukun Shanghai, CN 9 17
Ren, Yu Shanghai, CN 24 158
Xu, Jin Shanghai, CN 309 1854
Zhang, Xusheng Shanghai, CN 185 6873

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