Buried low-resistance metal word lines for cross-point variable-resistance material memories

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United States of America Patent

PATENT NO 9666800
SERIAL NO

14844747

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Abstract

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Variable-resistance material memories include a buried salicide word line disposed below a diode. Variable-resistance material memories include a metal spacer spaced apart and next to the diode. Processes include the formation of one of the buried salicide word line and the metal spacer. Devices include the variable-resistance material memories and one of the buried salicided word line and the spacer word line.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Liu, Jun Boise, US 1409 16666
Violette, Michael P Boise, US 97 1349

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