Method for recharging raw material polycrystalline silicon
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United States of America Patent
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Jun 6, 2017
Grant Date -
Jun 28, 2012
app pub date -
Dec 19, 2011
filing date -
Dec 28, 2010
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Abstract
A method for recharging raw material polycrystalline silicon which enables large chunks of polycrystalline silicon to be recharged to a CZ ingot growth process while preventing the CZ crucible from being damaged and restricting a decline of the dislocation free rate and the quality of the grown ingot. Polycrystalline silicon chunks are recharged by first forming cushioning layer silicon of smaller chunks. The cushioning layer of polycrystalline silicon chunks are deposited on a surface of the residual silicon melt in a crucible. Subsequently, large-sized polycrystalline silicon chunks are introduced onto the cushioning layer, the cushioning layer cushioning the impact due to dropping of the large-sized polycrystalline silicon chunks.
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