Gallium nitride substrate and manufacturing method of nitride semiconductor crystal
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United States of America Patent
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Jun 6, 2017
Grant Date -
Oct 29, 2015
app pub date -
Jun 16, 2015
filing date -
Dec 17, 2012
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Abstract
The invention provides a nonpolar or semipolar GaN substrate, in which a nitride semiconductor crystal having a low stacking fault density can be epitaxially grown on the main surface of the substrate, and a method for manufacturing an M-plane GaN substrate by forming a mask pattern having a line-shaped opening parallel to an a-axis of a C-plane GaN substrate on an N-polar plane of the C-plane GaN substrate, growing a plane-shape GaN crystal of which thickness direction is an m-axis direction from the opening of the mask pattern by an ammonothermal method, and cutting out the M-plane GaN substrate from the plane-shape GaN crystal.
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