Processing of thick metal pads
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United States of America Patent
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Jun 6, 2017
Issued Date -
N/A
app pub date -
Jun 28, 2016
filing date -
May 29, 2014
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Abstract
In an embodiment of the present invention, a method of forming a semiconductor device includes providing a semiconductor substrate including a first chip region and a second chip region. A first contact pad is formed over the first chip region and a second contact pad is formed over the second chip region. The first and the second contact pads are at least as thick as the semiconductor substrate. The method further includes dicing through the semiconductor substrate between the first and the second contact pads. The dicing is performed from a side of the semiconductor substrate including the first contact pad and the second contact pad. A conductive liner is formed over the first and the second contact pads and sidewalls of the semiconductor substrate exposed by the dicing.
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