Method of manufacturing photoelectric conversion device
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United States of America Patent
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Jun 6, 2017
Grant Date -
Nov 10, 2016
app pub date -
Apr 27, 2016
filing date -
May 7, 2015
priority date (Note) -
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Abstract
A method of manufacturing a photoelectric conversion device includes forming, with material containing aluminum, an electrically conductive pattern on a semiconductor substrate including a photoelectric converter, forming, on the electrically conductive pattern, an insulating film containing hydrogen, performing first annealing in a hydrogen-containing atmosphere, forming, on the insulating film, a protective film having lower hydrogen permeability than that of the insulating film after the first annealing, and performing second annealing in the hydrogen-containing atmosphere. Temperature in the first annealing is not less than temperature when forming the insulating film and not more than temperature when forming the protective film.
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