Resistive memory device and fabrication methods

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United States of America Patent

PATENT NO 9673255
SERIAL NO

14597151

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Abstract

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A method for forming a resistive memory device includes providing a substrate comprising a first metal material, forming a conductive silicon-bearing layer on top of the first metal material, wherein the conductive silicon-bearing layer comprises an upper region and a lower region, and wherein the lower region is adjacent to the first metal material, forming an amorphous layer from the upper region of the conductive silicon-bearing layer, and disposing an active metal material above the amorphous layer.

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Patent Owner(s)

  • CROSSBAR, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jo, Sung Hyun Sunnyvale, US 125 2894
Kim, Kuk-Hwan San Jose, US 117 2138
Kumar, Tanmay Pleasanton, US 106 3382

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