Etching composition

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United States of America Patent

PATENT NO 9677002
APP PUB NO 20160032185A1
SERIAL NO

14879835

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Abstract

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An etching composition includes about 1 wt % to about 7 wt % of hydrogen peroxide, about 20 wt % to about 80 wt % of phosphoric acid, about 0.001 wt % to about 1 wt % of an amine or amide polymer, 0 wt % to about 55 wt % of sulfuric acid, and about 10 wt % to about 45 wt % of deionized water.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU GYEONGGI-DO SUWON-SI 443-742

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bae, Sang Won Suwon-si, KR 42 1213
Han, Sol Gyeonggi-do, KR 35 102
Kim, Bo yun Hwaseong-si, KR 13 38
Kim, Hongjin Seoul, KR 18 411
Ko, Yongsun Suwon-si, KR 33 215
Kwon, Byoungho Hwaseong-si, KR 31 114
Lee, Hyosan Suwon-si, KR 47 526
Lee, Kuntack Suwon-si, KR 73 881
Park, Sungoh Seoul, KR 2 1

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