Precursors and methods for atomic layer deposition of transition metal oxides

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United States of America Patent

PATENT NO 9677173
SERIAL NO

15157698

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Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.

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Patent OwnerAddress
ASM INTERNATIONAL N V1322 AP ALMERE

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hatanpaa, Timo Espoo, FI 20 608
Haukka, Suvi Helsinki, FI 94 21518
Leskela, Markku Espoo, FI 59 3393
Niinisto, Jaakko Vantaa, FI 8 534
Ritala, Mikko Espoo, FI 97 8656

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