Method of fabricating rare-earth doped piezoelectric material with various amounts of dopants and a selected C-axis orientation
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United States of America Patent
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Jun 13, 2017
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Jan 22, 2014
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Jan 22, 2010
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Abstract
A method of fabricating a rare-earth element doped piezoelectric material having a first component, a second component and the rare-earth element. The method includes: providing a substrate; initially flowing hydrogen over the substrate; after the initially flowing of the hydrogen over the substrate, flowing the first component to form the rare-earth element doped piezoelectric material over a surface of a target, the target comprising the rare-earth metal in a certain atomic percentage; and sputtering the rare-earth element doped piezoelectric material from the target on the substrate.
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