Organic thin film transistors and methods for their manufacturing and use

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United States of America Patent

PATENT NO 9680097
APP PUB NO 20160043315A1
SERIAL NO

14782600

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Abstract

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Methods of forming an organic thin film transistor are provided. The methods include providing a substrate and depositing and patterning a gate electrode on a first surface of the substrate. The methods include dispensing a first droplet of an insulating material on the gate electrode on the substrate and dispensing a second droplet of a semiconductor material on a first surface of the first droplet. The second droplet forms a hydrophobic structure having a central cavity. The methods also include dispensing a third droplet of a conductor material on a first surface of the second droplet such that the conductor material substantially fills the central cavity of the hydrophobic structure and forms a conductor material layer around the central cavity to define a source electrode and a drain electrode of the organic thin film transistor.

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Patent Owner(s)

Patent OwnerAddress
INDIAN INSTITUTE OF TECHNOLOGY KANPURDEAN RESEARCH & DEVELOPMENT ROOM NUMBER 151 FACULTY BUILDING POST OFFICE IIT KANPUR KANPUR UTTAR PRADESH 208016

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Katiyar, Monica Kanpur, IN 2 27
Mandal, Saumen Naskarpur, IN 1 1

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