Abrasive composition and method for producing semiconductor substrate
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United States of America Patent
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Jun 20, 2017
Grant Date -
Mar 19, 2015
app pub date -
Mar 12, 2013
filing date -
Mar 14, 2012
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Abstract
The polishing composition has a pH of 7 or more and is used in applications for polishing a silicon substrate. The polishing composition contains abrasive grains and a water-soluble polymer. The water-soluble polymer is a copolymer including a first monomer unit having a characteristic value P of 50-100 inclusive, and a second monomer unit having a characteristic value P of at least −100 and less than 50. The characteristic value P is the result of subtracting an adsorption coefficient S2 of the abrasive grains obtained through a specific standard test B from a wettability coefficient S1 of the silicon substrate obtained through a specific standard test A.
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