Method of forming a flexible semiconductor layer and devices on a flexible carrier
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United States of America Patent
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Jun 27, 2017
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app pub date -
May 4, 2016
filing date -
Jul 9, 2015
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Abstract
A method for fabricating a semiconductor device comprises providing a preformed spalled structure comprising a stressor layer stack on a first surface of a semiconductor substrate; forming an interfacial release layer on an exposed second surface of the semiconductor substrate; adhesively bonding the interfacial release layer to a rigid handle substrate using an epoxy; removing at least a portion of the stressor layer stack from the first surface of the semiconductor substrate; processing the semiconductor substrate; and removing the semiconductor substrate from the interfacial release layer to impart flexibility to the semiconductor substrate.
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