Nonvolatile semiconductor storage device and method of manufacture thereof

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United States of America Patent

PATENT NO 9691779
SERIAL NO

14476498

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Abstract

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A nonvolatile semiconductor storage device including a number of memory cells formed on a semiconductor substrate, each of the memory cells has a tunnel insulating film, a charge storage layer, a block insulating film, and a gate electrode which are formed in sequence on the substrate. The gate electrode is structured such that at least first and second gate electrode layers are stacked. The dimension in the direction of gate length of the second gate electrode layer, which is formed on the first gate electrode layer, is smaller than the dimension in the direction of gate length of the first gate electrode layer.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yaegashi, Toshitake Yokohama, JP 98 1255

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