Semiconductor device and method of manufacturing semiconductor device
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United States of America Patent
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Jun 27, 2017
Grant Date -
Sep 8, 2016
app pub date -
Aug 26, 2015
filing date -
Mar 5, 2015
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Abstract
A semiconductor device includes first semiconductor regions of a first conductivity type spaced apart from each other and second semiconductor regions of a second conductivity type between adjacent first semiconductor regions. At least one second semiconductor region includes a void having at least one outer surface with a crystal plane orientation of (100). A third semiconductor region of the second conductivity type is on each second semiconductor region and a fourth semiconductor region of the first conductivity type is on the third semiconductor region. A gate electrode on is disposed on each first semiconductor region to be adjacent to a third semiconductor region via a gate insulation layer.
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