Vertical transistor with air-gap spacer

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United States of America Patent

PATENT NO 9691850
SERIAL NO

15163059

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Abstract

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A vertical transistor has a first air-gap spacer between a gate and a bottom source/drain region, and a second air-gap spacer between the gate and the contact to the bottom source/drain region. A dielectric layer disposed between the gate and the contact to the top source/drain decreases parasitic capacitance and inhibits electrical shorting.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Kangguo Schenectady, US 3073 29638
Ning, Tak H Yorktown Heights, US 251 3236

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