Semiconductor memory device and method of controlling the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9691978
APP PUB NO 20160163981A1
SERIAL NO

14941946

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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According to one embodiment, a semiconductor memory device includes a plurality of first wirings, a plurality of second wirings, a variable resistance layer, a first barrier insulating layer, and a second barrier insulating layer. The first wirings are disposed at predetermined pitches in a first direction intersecting with a substrate. The second wirings are disposed at predetermined pitches in a second direction intersecting with the first direction. The second wirings are formed to extend in the first direction. The variable resistance layer is disposed between the first wiring and the second wiring. The variable resistance layer is disposed at a position where the first wiring intersects with the second wiring. The first barrier insulating layer is disposed between the first wiring and the variable resistance layer. The second barrier insulating layer is disposed between the second wiring and the variable resistance layer.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ichihara, Reika Yokohama, JP 75 745
Toriyama, Shuichi Yokohama, JP 14 122

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