Three-dimensional metal resistor formation

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United States of America Patent

PATENT NO 9698212
SERIAL NO

14953882

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Abstract

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A method includes forming an insulating carrier substrate, forming a shallow trench isolation region within the insulating carrier substrate, and forming a plurality of gate recesses on the shallow trench isolation region. The plurality of gate recesses is formed by forming a plurality of dummy gates on the shallow trench isolation region and etching the plurality of dummy gates. The method further includes depositing a metal resistor layer within the plurality of gate recesses.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Basker, Veeraraghavan S Schenectady, US 487 4282
Cheng, Kangguo Schenectady, US 3073 29791
Standaert, Theodorus E Clifton Park, US 302 2583
Wang, Junli Slingerlands, US 492 2776

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