Localized and self-aligned punch through stopper doping for finFET

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United States of America Patent

PATENT NO 9698225
SERIAL NO

14792963

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Abstract

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A method for doping punch through stoppers (PTSs) includes forming fins in a monocrystalline substrate, forming a dielectric layer at a base portion between the fins and forming spacers on sidewalls of the fins down to a top portion of the dielectric layer. The dielectric layer is recessed to form gaps between the top portion of the dielectric layer and the spacer to expose the fins in the gaps. The fins are doped through the gaps to form PTSs in the fins.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Leobandung, Effendi Stormville, US 536 4742
Yamashita, Tenko Schenectady, US 599 4944

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