Photovoltaic device including a P-N junction and method of manufacturing
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United States of America Patent
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Jul 4, 2017
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Feb 3, 2014
filing date -
Feb 1, 2013
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Abstract
A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.
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