RF-TRANSISTORS WITH SELF-ALIGNED POINT CONTACTS
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United States of America Patent
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app pub date -
Dec 30, 2015
filing date -
Dec 30, 2015
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Abstract
A method of fabricating a semiconductor device includes depositing a dielectric layer on a substrate and a nanomaterial on the dielectric layer. The method also includes depositing a thin metal layer on the nanomaterial and removing a portion of the thin metal layer from a gate area. The method also includes depositing a gate dielectric layer. The method also includes selectively removing the gate dielectric layer from a source contact region and a drain contact region. The method also includes patterning a gate electrode, a source electrode, and a drain electrode.
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