Method and apparatus for irradiating a semiconductor material surface by laser energy

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United States of America Patent

PATENT NO 9700959
SERIAL NO

13263219

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Abstract

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A method for irradiating semiconductor material is provided which includes selecting a region of a semiconductor layer surface, irradiating the region with an excimer laser which has a beam spot size, and adjusting the beam spot size to match the selected region size. Further, an apparatus for irradiating semiconductor material is provided. The apparatus includes an excimer laser for irradiating a selected region of a semiconductor layer surface, the laser has a laser beam spot size, and a system for adjusting the laser beam spot size to match the selected region size.

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Patent Owner(s)

Patent OwnerAddress
LASER SYSTEMS & SOLUTIONS OF EUROPE92230 GENNEVILLIERS

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bucchia, Marc Herblay, FR 1 4
Dutems, Cyril Colombes, FR 3 4
Godard, Bruno Les Ulis, FR 9 31
Venturini, Julien Paris, FR 2 7

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